THE SPACE-CHARGE REGION AROUND A METALLIC PLATELET IN A SEMICONDUCTOR

被引：20

作者：

DONOLATO, C

机构：

[1] Istituto di Chimica e Tecnologia dei Materiali e dei Componenti per l'Elettronica, Bologna

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 01期

关键词：

D O I：

10.1088/0268-1242/8/1/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The problem of the potential of a flat metallic disc embedded in a semiconductor and giving rise to a Schottky barrier is studied analytically. The space-charge region around the disc is approximately spheroidal; expressions are given which describe the size of this region and the space-charge potential. The theory is applied to platelet-shaped precipitates of NiSi2 in silicon.

引用

页码：45 / 49

页数：5

共 12 条

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