SCHOTTKY-BARRIER HEIGHTS OF SINGLE-CRYSTAL NISI2 ON SI(111) - THE EFFECT OF A SURFACE P-N-JUNCTION

被引：77

作者：

TUNG, RT

NG, KK

GIBSON, JM

LEVI, AFJ

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.33.7077

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7077 / 7090

页数：14

共 33 条

[1] P-N-JUNCTIONS IN SURFACE REGION OF SILICON OBTAINED BY EVAPORATION OF SILICON IN ULTRAHIGH-VACUUM
ALEKSANDROV, LN
LOVYAGIN, RN
SIMONOV, PA
BZINKOVSKAYA, IS
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (02): : 521 - 527
[2] P-LAYERS ON VACUUM HEATED SILICON
ALLEN, FG
BUCK, TM
LAW, JT
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 979 - 985
[3] ELECTRONIC-STRUCTURE AND PROPERTIES OF NI-SI(001) AND NI-SI(111) REACTIVE INTERFACES
BISI, O
CHIAO, LW
TU, KN
[J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4664 - 4674
[4] BOLTAKS BI, 1969, FIZ TVERD TELA+, V11, P330
[5] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[6] CHANTRE A, UNPUB
[7] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE
CHERNS, D
ANSTIS, GR
HUTCHISON, JL
SPENCE, JCH
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05): : 849 - 862
[8] EHRSTEIN J, 1978, NON DESTRUCTIVE EVAL
[9] FROITZHEIM H, 1984, PHYS REV B, V30, P5771, DOI 10.1103/PhysRevB.30.5771
[10] PROPERTIES OF NICKEL IN SILICON
GHANDHI, SK
THIEL, FL
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1484 - &