FROM INP/GAINASP INTERFACE STUDY TO NANOMETER RANGE HETEROSTRUCTURE DETECTION WITH PROBE METHOD

被引：4

作者：

WALACHOVA, J ^{[1
]}

SROUBEK, Z ^{[1
]}

ZELINKA, J ^{[1
]}

KOT, M ^{[1
]}

PITTROFF, W ^{[1
]}

机构：

[1] CENT INST OPT & SPECTR,D-12489 BERLIN,GERMANY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 01期

关键词：

D O I：

10.1116/1.587159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of InP/GaInAsP interface study using the contact probe profiling method are presented. Results of the interface study are given for lambda = 1.3 mum laser heterostructures. A correlation is shown between the shape of the interface in the heterostructure and the threshold current of lasers produced from such heterostructures. The correlation of the results with secondary ion mass spectroscopy measurements is also demonstrated. An idea is given of how to detect the very close spaced interfaces with the contact probe method. Its realization with the use of Kr+ ion bombardment is shown. In conclusion the ballistic electron emission microscopy is suggested as an attractive new method for characterization of shallow heterostructures.

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页码：312 / 316

页数：5

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