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ZN GETTERING IN INGAAS/INP INTERFACES
被引:19
作者
:
GEVA, M
论文数:
0
引用数:
0
h-index:
0
GEVA, M
SEIDEL, TE
论文数:
0
引用数:
0
h-index:
0
SEIDEL, TE
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1986年
/ 59卷
/ 07期
关键词
:
D O I
:
10.1063/1.336342
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2408 / 2415
页数:8
相关论文
共 32 条
[1]
MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES
[J].
ADACHI, S
论文数:
0
引用数:
0
h-index:
0
ADACHI, S
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(12)
:8775
-8792
[2]
IMPURITY-PEAK FORMATION DURING PROTON-ENHANCED DIFFUSION OF PHOSPHORUS AND BORON IN SILICON
[J].
AKUTAGAWA, W
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
AKUTAGAWA, W
;
DUNLAP, HL
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
DUNLAP, HL
;
HART, R
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
HART, R
;
MARSH, OJ
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
MARSH, OJ
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
:777
-782
[3]
INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH
[J].
ASTLES, MG
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ASTLES, MG
;
SMITH, FGH
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
SMITH, FGH
;
WILLIAMS, EW
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
WILLIAMS, EW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(12)
:1750
-1757
[4]
THERMAL-EXPANSION PARAMETERS OF SOME GAXIN1-XASYP1-X ALLOYS
[J].
BISARO, R
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire Central de Recherches, Thomson-C.S.F
BISARO, R
;
MERENDA, P
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire Central de Recherches, Thomson-C.S.F
MERENDA, P
;
PEARSALL, TP
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire Central de Recherches, Thomson-C.S.F
PEARSALL, TP
.
APPLIED PHYSICS LETTERS,
1979,
34
(01)
:100
-102
[5]
RUTHERFORD SCATTERING STUDY OF DIFFUSION OF HEAVY-METAL IMPURITIES IN SILICON TO ION-DAMAGED SURFACE-LAYERS
[J].
BUCK, TM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BUCK, TM
;
POATE, JM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
POATE, JM
;
PICKAR, KA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PICKAR, KA
;
HSIEH, CM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
HSIEH, CM
.
SURFACE SCIENCE,
1973,
35
(01)
:362
-379
[6]
PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
[J].
CHIANG, SY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
CHIANG, SY
;
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
PEARSON, GL
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(07)
:2986
-2991
[7]
REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS
[J].
EVANS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
INT RECTIFIER CORP,EL SEGUNDO,CA 90245
EVANS, CA
;
DELINE, VR
论文数:
0
引用数:
0
h-index:
0
机构:
INT RECTIFIER CORP,EL SEGUNDO,CA 90245
DELINE, VR
;
SIGMON, TW
论文数:
0
引用数:
0
h-index:
0
机构:
INT RECTIFIER CORP,EL SEGUNDO,CA 90245
SIGMON, TW
;
论文数:
引用数:
h-index:
机构:
LIDOW, A
.
APPLIED PHYSICS LETTERS,
1979,
35
(03)
:291
-293
[8]
IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS
[J].
FAVENNEC, PN
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications
FAVENNEC, PN
;
HARIDON, HL
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications
HARIDON, HL
.
APPLIED PHYSICS LETTERS,
1979,
35
(09)
:699
-701
[9]
DEPTH PROFILES OF FE AND CR IMPLANTS IN INP AFTER ANNEALING
[J].
GAUNEAU, M
论文数:
0
引用数:
0
h-index:
0
GAUNEAU, M
;
LHARIDON, H
论文数:
0
引用数:
0
h-index:
0
LHARIDON, H
;
RUPERT, A
论文数:
0
引用数:
0
h-index:
0
RUPERT, A
;
SALVI, M
论文数:
0
引用数:
0
h-index:
0
SALVI, M
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
:6823
-6827
[10]
GUPTA DC, 1983, SOLID STATE TECHNOL, V26, P149
←
1
2
3
4
→
共 32 条
[1]
MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES
[J].
ADACHI, S
论文数:
0
引用数:
0
h-index:
0
ADACHI, S
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(12)
:8775
-8792
[2]
IMPURITY-PEAK FORMATION DURING PROTON-ENHANCED DIFFUSION OF PHOSPHORUS AND BORON IN SILICON
[J].
AKUTAGAWA, W
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
AKUTAGAWA, W
;
DUNLAP, HL
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
DUNLAP, HL
;
HART, R
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
HART, R
;
MARSH, OJ
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
MARSH, OJ
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
:777
-782
[3]
INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH
[J].
ASTLES, MG
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ASTLES, MG
;
SMITH, FGH
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
SMITH, FGH
;
WILLIAMS, EW
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
WILLIAMS, EW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(12)
:1750
-1757
[4]
THERMAL-EXPANSION PARAMETERS OF SOME GAXIN1-XASYP1-X ALLOYS
[J].
BISARO, R
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire Central de Recherches, Thomson-C.S.F
BISARO, R
;
MERENDA, P
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire Central de Recherches, Thomson-C.S.F
MERENDA, P
;
PEARSALL, TP
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire Central de Recherches, Thomson-C.S.F
PEARSALL, TP
.
APPLIED PHYSICS LETTERS,
1979,
34
(01)
:100
-102
[5]
RUTHERFORD SCATTERING STUDY OF DIFFUSION OF HEAVY-METAL IMPURITIES IN SILICON TO ION-DAMAGED SURFACE-LAYERS
[J].
BUCK, TM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BUCK, TM
;
POATE, JM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
POATE, JM
;
PICKAR, KA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PICKAR, KA
;
HSIEH, CM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
HSIEH, CM
.
SURFACE SCIENCE,
1973,
35
(01)
:362
-379
[6]
PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
[J].
CHIANG, SY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
CHIANG, SY
;
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
PEARSON, GL
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(07)
:2986
-2991
[7]
REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS
[J].
EVANS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
INT RECTIFIER CORP,EL SEGUNDO,CA 90245
EVANS, CA
;
DELINE, VR
论文数:
0
引用数:
0
h-index:
0
机构:
INT RECTIFIER CORP,EL SEGUNDO,CA 90245
DELINE, VR
;
SIGMON, TW
论文数:
0
引用数:
0
h-index:
0
机构:
INT RECTIFIER CORP,EL SEGUNDO,CA 90245
SIGMON, TW
;
论文数:
引用数:
h-index:
机构:
LIDOW, A
.
APPLIED PHYSICS LETTERS,
1979,
35
(03)
:291
-293
[8]
IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS
[J].
FAVENNEC, PN
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications
FAVENNEC, PN
;
HARIDON, HL
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications
HARIDON, HL
.
APPLIED PHYSICS LETTERS,
1979,
35
(09)
:699
-701
[9]
DEPTH PROFILES OF FE AND CR IMPLANTS IN INP AFTER ANNEALING
[J].
GAUNEAU, M
论文数:
0
引用数:
0
h-index:
0
GAUNEAU, M
;
LHARIDON, H
论文数:
0
引用数:
0
h-index:
0
LHARIDON, H
;
RUPERT, A
论文数:
0
引用数:
0
h-index:
0
RUPERT, A
;
SALVI, M
论文数:
0
引用数:
0
h-index:
0
SALVI, M
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
:6823
-6827
[10]
GUPTA DC, 1983, SOLID STATE TECHNOL, V26, P149
←
1
2
3
4
→