TEMPERATURE INVESTIGATION OF THE GATE-DRAIN DIODE OF POWER GAAS-MESFET WITH LOW-TEMPERATURE-GROWN (AL)GAAS PASSIVATION

被引：7

作者：

YIN, LW ^{[1
]}

NGUYEN, NX ^{[1
]}

HWANG, Y ^{[1
]}

IBBETSON, JP ^{[1
]}

KOLBAS, RM ^{[1
]}

GOSSARD, AC ^{[1
]}

MISHRA, UK ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 12期

关键词：

BREAKDOWN; LT-GAAS; MESFET; PASSIVATION;

D O I：

10.1007/BF02650008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the breakdown-temperature characteristics of the gate-drain diode of a GaAs metal semiconductor held-effect transistor with low-temperature-grown (LTG) GaAs/AlGaAs passivation. An anomalous decrease in the breakdown voltage as a function of the temperature is observed. This behavior leads us to propose an explanation of how LTG passivation leads to a high breakdown voltage at room temperature; and this explanation in turn allows us to predict the power performance of the passivated devices.

引用

页码：1503 / 1505

页数：3

共 6 条

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