GATE BREAKDOWN IN MESFETS AND HEMTS

被引：61

作者：

TREW, RJ ^{[1
]}

MISHRA, UK ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA, DEPT ELECT & COMP ENGN, SANTA BARBARA, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.119177

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new model for gate breakdown in MESFET's and HEMT's is presented. The model is based upon a combination of thermally assisted tunneling and avalanche breakdown. When thermal effects are considered it is demonstrated that the model predicts increasing drain-source breakdown as the gate electrode is biased towards pinch-off, in agreement with experimental data. The model also predicts, for the first time, the gate current versus bias behavior observed in experimental data. The model is consistent with the various reports of breakdown and light emission phenomena reported in the literature.

引用

页码：524 / 526

页数：3

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