PERSISTENT ROOM-TEMPERATURE RELAXATION OF INP AMORPHIZED AND COMPACTED BY MEV ION-BEAMS

被引：15

作者：

CLICHE, L ^{[1
]}

ROORDA, S ^{[1
]}

MASUT, RA ^{[1
]}

机构：

[1] ECOLE POLYTECH,DEPT GENIE PHYS,RECH PHYS & TECHNOL COUCHES MINCES GRP,MONTREAL H3C 3A7,QUEBEC,CANADA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 14期

关键词：

D O I：

10.1063/1.112907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ion beam induced deformation and compaction has been observed in InP, amorphized by MeV Se ion implantation. The initial density of amorphous InP is 0.55%+/-0.05% larger than that of crystalline InP. During a period of two months, most of the excess density is lost in a spontaneous, room-temperature relaxation. This relaxation can be described by two time constants: tau1 almost-equal-to 8 +/- 2 h and tau2 almost-equal-to 14 +/- 1 days. (C) 1994 American Institute of Physics.

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页码：1754 / 1756

页数：3

相关论文

共 14 条

[1] ROOM-TEMPERATURE ANNEALING OF SI IMPLANTATION DAMAGE IN INP [J].

AKANO, UG ;

MITCHELL, IV ;

SHEPHERD, FR .

APPLIED PHYSICS LETTERS, 1991, 59 (20) :2570-2572

[2] DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED AMORPHOUS-SILICON [J].

COFFA, S ;

PRIOLO, F ;

BATTAGLIA, A .

PHYSICAL REVIEW LETTERS, 1993, 70 (24) :3756-3759

[3] DENSITY OF AMORPHOUS SI [J].

CUSTER, JS ;

THOMPSON, MO ;

JACOBSON, DC ;

POATE, JM ;

ROORDA, S ;

SINKE, WC ;

SPAEPEN, F .

APPLIED PHYSICS LETTERS, 1994, 64 (04) :437-439

[4] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J].

DONOVAN, EP ;

SPAEPEN, F ;

TURNBULL, D ;

POATE, JM ;

JACOBSON, DC .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1795-1804

[5] MEASUREMENT AND INTERPRETATION OF STRESS IN ALUMINUM-BASED METALLIZATION AS A FUNCTION OF THERMAL HISTORY [J].

FLINN, PA ;

GARDNER, DS ;

NIX, WD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) :689-699

[6]

KENNEDY EF, 1980, APPL PHYS LETT, V38, P375

[7] CAVITY FORMATION AND PLASTIC-FLOW OF A-SI - H DURING HEAVY-ION BOMBARDMENT [J].

KLAUMUNZER, S ;

RAMMENSEE, M ;

LOFFLER, S ;

NEITZERT, HC ;

SAEMANNISCHENKO, G .

JOURNAL OF MATERIALS RESEARCH, 1991, 6 (10) :2109-2119

[8] DENSITY-MEASUREMENT OF AMORPHOUS SIXGE1-X ALLOYS [J].

LAAZIRI, K ;

ROORDA, S ;

CLICHE, L .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 90 (1-4) :438-441

[9] STRUCTURAL RELAXATION AND DEFECT ANNIHILATION IN PURE AMORPHOUS-SILICON [J].

ROORDA, S ;

SINKE, WC ;

POATE, JM ;

JACOBSON, DC ;

DIERKER, S ;

DENNIS, BS ;

EAGLESHAM, DJ ;

SPAEPEN, F ;

FUOSS, P .

PHYSICAL REVIEW B, 1991, 44 (08) :3702-3725

[10] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J].

SIGMUND, P .

PHYSICAL REVIEW, 1969, 184 (02) :383-+