CURRENT-VOLTAGE ANOMALIES ON POLYCRYSTALLINE GDSI2/P-SI SCHOTTKY JUNCTIONS DUE TO GRAIN-BOUNDARIES

被引：6

作者：

KOVACS, B

MOLNAR, G

DOZSA, L

PETO, G

ANDRASI, M

KARANYI, J

HORVATH, ZJ

机构：

[1] TECH UNIV BUDAPEST,DIV ELECTR TECHNOL,H-1521 BUDAPEST,HUNGARY

[2] HUNGARIAN ACAD SCI,KFKI RES INST MAT SCI,H-1525 BUDAPEST,HUNGARY

来源：

VACUUM | 1995年 / 46卷 / 8-10期

基金：

匈牙利科学研究基金会;

关键词：

D O I：

10.1016/0042-207X(95)00088-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The current-voltage characteristics of epitaxial orthorhombic, textured orthorhombic, polycrystalline orthorhombic, and polycrystalline hexagonal GdSi2/(100)p-Si Schottky structures prepared by solid phase epitaxy are compared. It is concluded that the anomalous I-V characteristics measured in the polycrystalline GdSi2/p-Si junctions, and the much higher values are scatters of the ideality factor and of the series resistance obtained for the polycrystalline structures may be explained by the oxidation of the Gd remaining near the grain boundaries in the GdSi2 layer.

引用

页码：983 / 985

页数：3

共 11 条

[1] EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].