EFFECT OF CRYSTALLIZATION ON THE ELECTRICAL AND INTERFACE CHARACTERISTICS OF GDSI2/P-SI SCHOTTKY JUNCTIONS

The electrical and interface parameters of epitaxial orthorhombic, textured orthorhombic, polycrystalline orthorhombic, and polycrystalline hexagonal GdSi2/(100)P-Si Schottky structures prepared by solid phase epitaxy with different initial thicknesses of the evaporated Gd layer are compared. The Schottky barrier height, the ideality factor, the series resistance, the breakdown voltage, the relative interfacial layer thickness, the energy distribution spectra of interface states, and the equilibrium interface charge have been evaluated from the measured current-voltage and capacitance-voltage characteristics. The obtained results indicate that the electrical and interface parameters depend strongly on the epitaxial or polycrystalline form of the GdSi2. The crystal structure (orthorhombic or hexagonal) in polycrystalline samples has only a minor influence. The epitaxial and textured orthorhombic structures also show only small difference.