EPITAXY OF ORTHORHOMBIC GADOLINIUM DISILICIDE ON (100) SILICON

被引：18

作者：

GEROCS, I ^{[1
]}

MOLNAR, G ^{[1
]}

JAROLI, E ^{[1
]}

ZSOLDOS, E ^{[1
]}

PETO, G ^{[1
]}

GYULAI, J ^{[1
]}

BUGIEL, E ^{[1
]}

机构：

[1] INST SEMICOND PHYS,D-1200 FRANKFURT,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 25期

关键词：

D O I：

10.1063/1.98974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2144 / 2145

页数：2

共 10 条

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[5]

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[7] FORMATION OF GDSI2 UNDER UHV EVAPORATION AND INSITU ANNEALING [J].

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[8] CONTACT REACTION BETWEEN SI AND RARE-EARTH-METALS [J].

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[10]

1982, JCPDS991 INT CTR DIF

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