THE EFFECT OF THE METAL-SEMICONDUCTOR INTERFACE ON THE BARRIER HEIGHT IN GAAS SCHOTTKY JUNCTIONS

被引：5

作者：

HORVATH, ZJ

机构：

[1] Research Institute for Technical Physics, the Hungarian Academy of Sciences, Budapest, H-1325

来源：

VACUUM | 1990年 / 41卷 / 4-6期

关键词：

D O I：

10.1016/0042-207X(90)93789-L

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

General interfacial layer expressions for the equilibrium Schottky barrier height are presented for both n and p-type semiconductors. The sum of the barrier height values is analysed as a function of the Fermi-level pinning. The effect of different technological steps on the interface parameters and on the barrier height is studied in GaAs Schottky junctions. Relations between the interface parameters and the barrier heights are presented for GaAs-Au junctions. © 1990.

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页码：804 / 806

页数：3

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