THE EFFECT OF PHOTOCHEMICAL SURFACE PASSIVATION ON REVERSE CURRENT IN TI-GAAS SCHOTTKY DIODES

被引：2

作者：

MEGLICKI, Z ^{[1
]}

NENER, BD ^{[1
]}

PRASAD, K ^{[1
]}

SHARDA, H ^{[1
]}

FARAONE, L ^{[1
]}

NASSIBIAN, AG ^{[1
]}

机构：

[1] UNIV WESTERN AUSTRALIA,DEPT ELECT & ELECTR ENGN,MICROELECTR RES GRP,NEDLANDS,WA 6009,AUSTRALIA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 03期

关键词：

D O I：

10.1143/JJAP.27.L290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L290 / L292

页数：3

共 8 条

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[8] PHOTO-ELECTROCHEMICAL PASSIVATION OF GAAS-SURFACES [J].

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