STUDY OF IMPLANTATION IN HGCDTE BY ELECTROLYTE ELECTROREFLECTANCE

被引：6

作者：

RACCAH, PM ^{[1
]}

GARLAND, JW ^{[1
]}

ZHANG, Z ^{[1
]}

YANG, D ^{[1
]}

BUBULAC, LO ^{[1
]}

TENNANT, WE ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 05期

关键词：

D O I：

10.1116/1.574864

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：3180 / 3183

页数：4

共 20 条

[1] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE
ASPNES, DE
[J]. SURFACE SCIENCE, 1973, 37 (01) : 418 - 442
[2] BOUKERCHE M, 1986, APPL PHYS LETT, V48, P173
[3] ELECTROREFLECTANCE OF ION-IMPLANTED GAAS
BROWN, RL
SCHOONVELD, L
ABELS, LL
SUNDARAM, S
RACCAH, PM
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2950 - 2957
[4] DEPENDENCE OF JUNCTION FORMATION ON SUBSTRATE IN IMPLANTED HGCDTE
BUBULAC, LO
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 976 - 978
[5] BEHAVIOR OF IMPLANTATION-INDUCED DEFECTS IN HGCDTE
BUBULAC, LO
TENNANT, WE
RIEDEL, RA
MAGEE, TJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 251 - 254
[6] ION-IMPLANTED JUNCTION FORMATION IN HG1-XCDXTE
BUBULAC, LO
TENNANT, WE
LO, DS
EDWALL, DD
ROBINSON, JC
CHEN, JS
BOSTRUP, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3166 - 3170
[7] INDIUM ION-IMPLANTATION IN HG0.78CD0.22TE/CDTE
DESTEFANIS, GL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 171 - 175
[8] DESTEFANIS GL, 1983, NUCL INSTRUM METHODS, V567, P209
[9] GARLAND JW, 1986, SPIE P, V659, P32
[10] FORMATION OF P-PHOTODIODES ON N-PHOTODIODES IN HG1-XCDXTE BY ION-IMPLANTATION AND CW CO2-LASER ANNEALING
KALISH, R
BAHIR, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 474 - 477