OHMIC CONTACTS IN GAAS

被引：49

作者：

YODER, MN

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 02期

关键词：

D O I：

10.1016/0038-1101(80)90145-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：117 / 119

页数：3

共 17 条

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[4]

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GREENE, JE .

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[8] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J].

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MAYER, JW ;

RODRIGUEZ, V ;

YU, AYC ;

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[9] RELIABILITY STUDY OF GAAS MESFETS [J].

IRIE, T ;

NAGASAKO, I ;

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[10]

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