INITIAL VALUE OF TRANSIENT PHOTOCURRENTS IN SILICON

被引：1

作者：

NORDE, H ^{[1
]}

SEIBT, W ^{[1
]}

机构：

[1] UNIV UPPSALA,INST TECHNOL,ELECTR DEPT,UPPSALA,SWEDEN

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 09期

关键词：

D O I：

10.1016/0038-1101(74)90055-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：996 / 998

页数：3

共 9 条

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