METHOD FOR IMAGING SIDEWALLS BY ATOMIC-FORCE MICROSCOPY

被引：175

作者：

MARTIN, Y

WICKRAMASINGHE, HK

机构：

[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 19期

关键词：

D O I：

10.1063/1.111578

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a new method for imaging vertical and near vertical surface features by atomic force microscopy (AFM). It is based on an attractive force mode AFM, equipped with a special boot-shaped tip, coupled with a measurement of slope and with a special tracking technique. Surface profiling is achieved through a novel servo and scanning system. Mapping sidewall profile opens the door to measurement of critical dimensions (width and wall angles) of lines and trenches in integrated circuits, with high accuracy.

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页码：2498 / 2500

页数：3

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