STUDY OF SURFACE EFFECTS IN THICK LITHIUM DRIFTED SILICON RADIATION DETECTORS

被引：18

作者：

LLACER, J

机构：

来源：

关键词：

D O I：

10.1109/TNS.1964.4323426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：221 / +

页数：1

共 8 条

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GOULDING, FS
HANSEN, WL
[J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02): : 249 - 262
[3] HANNAY NB, SEMICONDUCTORS, pCH16
[4] REVIEW OF GERMANIUM SURFACE PHENOMENA
KINGSTON, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (02) : 101 - 114
[5] SILICON DIOXIDE PASSIVATION OF P-N JUNCTION PARTICLE DETECTORS
MADDEN, TC
GIBSON, WM
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (01) : 50 - +
[6] CHANNELS AND EXCESS REVERSE CURRENT IN GROWN GERMANIUM P-N JUNCTION DIODES
MCWHORTER, AL
KINGSTON, RH
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (09): : 1376 - 1380
[7] MILLER GL, 1962, ANN REV NUC SCI, V12
[8] REINHOLD, SEMICONDUCTORS, pCH16