SILICON DIOXIDE PASSIVATION OF P-N JUNCTION PARTICLE DETECTORS

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[2] Atalla M., 1959, PROC IEE B ELECT COM, V106, P1130, DOI [10.1049/pi-b-2.1959.0204, DOI 10.1049/PI-B-2.1959.0204]

[3] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[4] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04): : 933 - 946

[5] BATDORF RL, PRIVATE COMMUNICATIO

[6] BUCK TM, 1961, NASNSS32 REPT, P111

[7] Buerger M. J., 1951, PHASE TRANSFORMATION

[8] COMINGS EW, 1956, HIGH PRESSURE TECHNO

[9] GIBSON WM, 1961, NASNSS32 REPT, P232

[10] LEAKAGE CURRENT IN SEMICONDUCTOR JUNCTION RADIATION DETECTORS AND ITS INFLUENCE ON ENERGY-RESOLUTION CHARACTERISTICS [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02): : 249 - 262

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[2] Atalla M., 1959, PROC IEE B ELECT COM, V106, P1130, DOI [10.1049/pi-b-2.1959.0204, DOI 10.1049/PI-B-2.1959.0204]

[3] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[4] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04): : 933 - 946

[5] BATDORF RL, PRIVATE COMMUNICATIO

[6] BUCK TM, 1961, NASNSS32 REPT, P111

[7] Buerger M. J., 1951, PHASE TRANSFORMATION

[8] COMINGS EW, 1956, HIGH PRESSURE TECHNO

[9] GIBSON WM, 1961, NASNSS32 REPT, P232

[10] LEAKAGE CURRENT IN SEMICONDUCTOR JUNCTION RADIATION DETECTORS AND ITS INFLUENCE ON ENERGY-RESOLUTION CHARACTERISTICS [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02): : 249 - 262