SILICON DIOXIDE PASSIVATION OF P-N JUNCTION PARTICLE DETECTORS

[11] A DIFFUSION MASK FOR GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (05) : 478 - 481

[12] KLERER J, PRIVATE COMMUNICATIO

[13] EFFECT OF CRYSTAL ORIENTATION ON OXIDATION RATES OF SILICON IN HIGH PRESSURE STEAM [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1961, 65 (11) : 2011 - &

[14] THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 131 - 136

[15] OXIDATION OF SILICON BY HIGH-PRESSURE STEAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) : 73 - 76

[16] SINCLAIR WR, TO BE PUBLISHED

[17] Sosman R. B., 1927, PROPERTIES SILICA

[18] OXYGEN EXCHANGE BETWEEN SILICA AND HIGH PRESSURE STEAM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 17 (3-4) : 196 - 202

[19] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132

[20] WALTZ M, 1955, BELL LABS RECORD, V33, P260

[11] A DIFFUSION MASK FOR GERMANIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (05) : 478 - 481

[12] KLERER J, PRIVATE COMMUNICATIO

[13] EFFECT OF CRYSTAL ORIENTATION ON OXIDATION RATES OF SILICON IN HIGH PRESSURE STEAM [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1961, 65 (11) : 2011 - &

[14] THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 131 - 136

[15] OXIDATION OF SILICON BY HIGH-PRESSURE STEAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) : 73 - 76

[16] SINCLAIR WR, TO BE PUBLISHED

[17] Sosman R. B., 1927, PROPERTIES SILICA

[18] OXYGEN EXCHANGE BETWEEN SILICA AND HIGH PRESSURE STEAM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 17 (3-4) : 196 - 202

[19] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132

[20] WALTZ M, 1955, BELL LABS RECORD, V33, P260