PHYSICAL AND ELECTRICAL-PROPERTIES OF PLASMA-GROWN OXIDE ON GA0.64AL0.36AS

被引：8

作者：

CHANG, RPH

CHANG, CC

COLEMAN, JJ

KAUFFMAN, RL

WAGNER, WR

FELDMAN, LC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 12期

关键词：

D O I：

10.1063/1.323548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5384 / 5386

页数：3

相关论文

共 5 条

[1]

CHANG CC, UNPUBLISHED

[2] PLASMA OXIDATION OF GAAS [J].

CHANG, RPH ;

SINHA, AK .

APPLIED PHYSICS LETTERS, 1976, 29 (01) :56-58

[3] PLASMA OXIDATION OF ALUMINUM FILM ON GAAS - STUDY BY AUGER-SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY [J].

CHANG, RPH ;

CHANG, CC ;

SHENG, TT .

APPLIED PHYSICS LETTERS, 1977, 30 (12) :657-659

[4] MULTIPURPOSE PLASMA REACTOR FOR MATERIALS RESEARCH AND PROCESSING [J].

CHANG, RPH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :278-280

[5] ANALYSIS OF PLASMA-GROWN GAAS OXIDE-FILMS [J].

KAUFFMAN, RL ;

FELDMAN, LC ;

POATE, JM ;

CHANG, RPH .

APPLIED PHYSICS LETTERS, 1977, 30 (07) :319-321