PN JUNCTION APPLICATIONS AND TRANSPORT PROPERTIES IN POLYSILICON RODS

被引：4

作者：

CRIADO, A ^{[1
]}

CALLEJA, E ^{[1
]}

MARTINEZ, J ^{[1
]}

PIQUERAS, J ^{[1
]}

MUNOZ, E ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,CSIC,INST FIS ESTADO SOLIDO,MADRID 34,SPAIN

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 08期

关键词：

D O I：

10.1016/0038-1101(79)90077-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

B-Doped polysilicon rods have been studied through their crystalline structure and electronic transport properties. P Diffusion data and the properties of the p-n junctions obtained are also discussed. Avalanche current distribution and reverse bias electric field spikes have been carefully studied. It is concluded that this material is quite suitable for low-cost solar cell applications, and, from preliminary experiments, could be of interest for power transient suppressors. © 1979.

引用

页码：693 / &

共 15 条

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