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POLYSILICON-SILICON N-P JUNCTION
被引:13
作者
:
LIEBLICH, Z
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,HAIFA,ISRAEL
TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,HAIFA,ISRAEL
LIEBLICH, Z
[
1
]
BARLEV, A
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,HAIFA,ISRAEL
TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,HAIFA,ISRAEL
BARLEV, A
[
1
]
机构
:
[1]
TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,HAIFA,ISRAEL
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1977年
/ 24卷
/ 08期
关键词
:
D O I
:
10.1109/T-ED.1977.18873
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1025 / 1031
页数:7
相关论文
共 20 条
[1]
THEORETICAL AND EXPERIMENTAL STUDY OF RECOMBINATION IN SILICON P-N-JUNCTIONS
ASHBURN, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS1 3EX,ENGLAND
UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS1 3EX,ENGLAND
ASHBURN, P
MORGAN, DV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS1 3EX,ENGLAND
UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS1 3EX,ENGLAND
MORGAN, DV
HOWES, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS1 3EX,ENGLAND
UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS1 3EX,ENGLAND
HOWES, MJ
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(06)
: 569
-
577
[2]
ENHANCEMENT OF BREAKDOWN PROPERTIES OF OVERLAY ANNULAR DIODES BY FIELD SHAPING RESISTIVE FILMS
CLARK, LE
论文数:
0
引用数:
0
h-index:
0
CLARK, LE
ZOROGLU, DS
论文数:
0
引用数:
0
h-index:
0
ZOROGLU, DS
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(06)
: 653
-
+
[3]
CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON.
Cowher, M.E.
论文数:
0
引用数:
0
h-index:
0
Cowher, M.E.
Sedgwick, T.O.
论文数:
0
引用数:
0
h-index:
0
Sedgwick, T.O.
[J].
1600,
(119):
[4]
INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE
EVERSTEY.FC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
EVERSTEY.FC
PUT, BH
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PUT, BH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(01)
: 106
-
110
[5]
FA CH, 1970, IEEE T ELECTRON DEVI, V13, P1125
[6]
SILICON GATE TECHNOLOGY
FAGGIN, F
论文数:
0
引用数:
0
h-index:
0
FAGGIN, F
KLEIN, T
论文数:
0
引用数:
0
h-index:
0
KLEIN, T
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(08)
: 1125
-
&
[7]
GROVE AS, 1967, PHYSICS SEMICONDUCTO
[8]
HORIUCHI S, 1973, BORON DIFFUSION SSE, V18, P529
[9]
RESISTIVITY OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON FILMS
JOSEPH, JD
论文数:
0
引用数:
0
h-index:
0
JOSEPH, JD
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
KAMINS, TI
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(03)
: 355
-
&
[10]
HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
KAMINS, TI
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(11)
: 4357
-
&
←
1
2
→
共 20 条
[1]
THEORETICAL AND EXPERIMENTAL STUDY OF RECOMBINATION IN SILICON P-N-JUNCTIONS
ASHBURN, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS1 3EX,ENGLAND
UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS1 3EX,ENGLAND
ASHBURN, P
MORGAN, DV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS1 3EX,ENGLAND
UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS1 3EX,ENGLAND
MORGAN, DV
HOWES, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS1 3EX,ENGLAND
UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS1 3EX,ENGLAND
HOWES, MJ
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(06)
: 569
-
577
[2]
ENHANCEMENT OF BREAKDOWN PROPERTIES OF OVERLAY ANNULAR DIODES BY FIELD SHAPING RESISTIVE FILMS
CLARK, LE
论文数:
0
引用数:
0
h-index:
0
CLARK, LE
ZOROGLU, DS
论文数:
0
引用数:
0
h-index:
0
ZOROGLU, DS
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(06)
: 653
-
+
[3]
CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON.
Cowher, M.E.
论文数:
0
引用数:
0
h-index:
0
Cowher, M.E.
Sedgwick, T.O.
论文数:
0
引用数:
0
h-index:
0
Sedgwick, T.O.
[J].
1600,
(119):
[4]
INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE
EVERSTEY.FC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
EVERSTEY.FC
PUT, BH
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PUT, BH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(01)
: 106
-
110
[5]
FA CH, 1970, IEEE T ELECTRON DEVI, V13, P1125
[6]
SILICON GATE TECHNOLOGY
FAGGIN, F
论文数:
0
引用数:
0
h-index:
0
FAGGIN, F
KLEIN, T
论文数:
0
引用数:
0
h-index:
0
KLEIN, T
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(08)
: 1125
-
&
[7]
GROVE AS, 1967, PHYSICS SEMICONDUCTO
[8]
HORIUCHI S, 1973, BORON DIFFUSION SSE, V18, P529
[9]
RESISTIVITY OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON FILMS
JOSEPH, JD
论文数:
0
引用数:
0
h-index:
0
JOSEPH, JD
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
KAMINS, TI
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(03)
: 355
-
&
[10]
HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON
KAMINS, TI
论文数:
0
引用数:
0
h-index:
0
KAMINS, TI
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(11)
: 4357
-
&
←
1
2
→