ELECTRONIC PROPERTIES OF UNDOPED POLYCRYSTALLINE SILICON

被引：24

作者：

MUNOZ, E ^{[1
]}

BOIX, JM ^{[1
]}

LLABRES, J ^{[1
]}

MONICO, JP ^{[1
]}

PIQUERAS, J ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS,LAB FIS APLICADA,CANTO BLANCO,MADRID,SPAIN

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 05期

关键词：

D O I：

10.1016/0038-1101(74)90073-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：439 / 446

页数：8

相关论文

共 15 条

[1] THERMAL AND ELECTRICAL ANISOTROPY OF POLYCRYSTALLINE SILICON
BEAN, KE
HENTZSCHEL, HP
COLMAN, D
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2358 - +
[2] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON.
Cowher, M.E.
Sedgwick, T.O.
[J]. 1600, (119):
[3] ELECTRON-OPTICAL-PHONON SCATTERING IN EMITTER AND COLLECTOR BARRIERS OF SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES
CROWELL, CR
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 979 - &
[4] FA CH, 1966, IEEE T ELECTRON DEVI, VED13, P290
[5] FORD KD, 1971, OCT EL SOC M CLEV
[6] RESISTIVITY OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON FILMS
JOSEPH, JD
KAMINS, TI
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 355 - &
[7] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON
KAMINS, TI
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &
[8] KOBAYASHI I, 1971, IEEE T ELECTRON DEVI, VED18, P45
[9] Matsukura Y., 1963, JPN J APPL PHYS, V2, P91
[10] P-I-N JUNCTIONS IN POLYCRYSTALLINE-SILICON
MONICOGARCIA, JP
MUNOZMER.E
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1515 - 1517