THEORETICAL INTERPRETATIONS OF THE GAP STATE DENSITY DETERMINED FROM THE FIELD-EFFECT AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF AMORPHOUS-SEMICONDUCTORS

被引：63

作者：

SUZUKI, T ^{[1
]}

OSAKA, Y ^{[1
]}

HIROSE, M ^{[1
]}

机构：

[1] HIROSHIMA UNIV,DEPT ELECT ENGN,HIROSHIMA 730,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 03期

关键词：

D O I：

10.1143/JJAP.21.L159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L159 / L161

页数：3

共 10 条

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[2]

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[6] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].

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[7]

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[8]

Noda T., 1981, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE64, P134

[9] DETERMINATION OF THE DENSITY OF STATE DISTRIBUTION OF A-SI-H BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY [J].

OKUSHI, H ;

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[10]

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