MISFIT DISLOCATIONS IN BICRYSTAL SYSTEM SILICON-BORON-DOPED SILICON

被引：12

作者：

SUGITA, Y

TAMURA, M

SUGAWARA, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1969年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.1315690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：585 / &

共 20 条

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[3]

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[8] COMMENT ON SLIP IN EPITAXIAL GE-GAAS COMBINATIONS [J].

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[9] PLASTIC DEFORMATION IN EPITAXIAL GE LAYERS GROWN ON SINGLE CRYSTAL SEMI-INSULATING GAAS [J].

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