EPITAXIAL STRATIFIED GROWTH

被引:1
作者
ALEKSANDROV, LN
机构
来源
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1978年 / 13卷 / 07期
关键词
D O I
10.1002/crat.19780130704
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:765 / 771
页数:7
相关论文
共 15 条
[1]  
Alekcandrov L. N., 1972, PROBLEMS EPITAXY SEM, P5
[2]  
Aleksandrov L. N., 1970, Kristallografiya, V15, P203
[3]  
Aleksandrov L. N., 1976, Kristall und Technik, V11, P591, DOI 10.1002/crat.19760110603
[4]   EPITAXIAL GERMANIUM-SILICON STRUCTURES OBTAINED IN ULTRAHIGH-VACUUM [J].
ALEKSANDROV, LN ;
LOVYAGIN, RN .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 37 (01) :341-352
[5]   STEP MOTION OF GROWTH SURFACE IN INITIAL-STAGE OF SEMICONDUCTOR FILM EPITAXY WITH ION SPUTTERING [J].
ALEKSANDROV, LN ;
LOVYAGIN, RN .
THIN SOLID FILMS, 1974, 20 (01) :1-10
[6]  
ALEKSANDROV LN, 1972, KRISTALLOGRAFIYA+, V17, P1031
[7]   STOCHASTIC THEORY OF NON-STEADY STATE NUCLEATION [J].
ALEKSANDROV, LN ;
KEDYAROV, BI .
JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :507-510
[8]   KINETICS OF THIN-FILM GROWTH UNDER HIGH ADATOM CONCENTRATIONS [J].
ALEKSANDROV, LN ;
ENTIN, IA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (01) :327-330
[9]  
ALEKSANDROV LN, 1973, DEFEKTY STRUKTURY PO, P10
[10]  
ALEKSANDROV LN, 1968, 4TH P INT VAC C MANC, P505