CURRENT-INDUCED DEFECT CREATION AND RECOVERY IN HYDROGENATED AMORPHOUS-SILICON

被引：59

作者：

STREET, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 09期

关键词：

D O I：

10.1063/1.106351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements of metastable defects induced by a forward bias current in a-Si:H p-i-n devices are reported. The defect density increases approximately as the square root of time, reaching saturation at long inducing times. Current-induced defect annihilation is also observed, in which the current causes a reduction in the defect density. The kinetics of creation and recovery are discussed, as well as the implications for models of metastable defects.

引用

收藏

页码：1084 / 1086

页数：3

相关论文

共 17 条

[1] METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

CRANDALL, RS .

PHYSICAL REVIEW B, 1987, 36 (05) :2645-2665

[2]

DELAHOY AE, 1987, AIP C P, V157, P263

[3] THE RELATIONSHIP BETWEEN HYDROGEN CONTENT, WEAK BOND DENSITY AND STAEBLER-WRONSKI DEFECTS IN AMORPHOUS-SILICON [J].

FORTMANN, CM ;

ZHOU, TX ;

BUCHANAN, WA .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :624-626

[4] CREATION OF NEAR-INTERFACE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON SILICON-NITRIDE HETEROJUNCTIONS - THE ROLE OF HYDROGEN [J].

JACKSON, WB ;

MOYER, MD .

PHYSICAL REVIEW B, 1987, 36 (11) :6217-6220

[5] ROLE OF BAND-TAIL CARRIERS IN METASTABLE DEFECT FORMATION AND ANNEALING IN HYDROGENATED AMORPHOUS-SILICON [J].

JACKSON, WB .

PHYSICAL REVIEW B, 1990, 41 (02) :1059-1075

[6]

KRUHLER W, 1984, AIP C P, V120, P311

[7] SATURATION OF THE LIGHT-INDUCED DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON [J].

PARK, HR ;

LIU, JZ ;

WAGNER, S .

APPLIED PHYSICS LETTERS, 1989, 55 (25) :2658-2660

[8]

REDFIELD D, 1990, MATER RES SOC SYMP P, V192, P273, DOI 10.1557/PROC-192-273

[9] REINTERPRETATION OF DEGRADATION KINETICS OF AMORPHOUS-SILICON [J].

REDFIELD, D ;

BUBE, RH .

APPLIED PHYSICS LETTERS, 1989, 54 (11) :1037-1039

[10]

REDFIELD D, 1989, APPL PHYS LETT, V52, P493