EFFECTS OF MERCURY PARTIAL-PRESSURE ON DEFECTS IN HGTE EPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：2

作者：

SHIGENAKA, K ^{[1
]}

KANNO, T ^{[1
]}

SAGA, M ^{[1
]}

UEMOTO, T ^{[1
]}

SUGIURA, L ^{[1
]}

ICHIZONO, K ^{[1
]}

HIRAHARA, K ^{[1
]}

机构：

[1] JAPAN DEF AGCY,INST TECH RES & DEV,MEGURO KU,TOKYO 153,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90715-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effects of mercury partial pressure on the defect density in HgTe grown by metalorganic chemical vapor deposition (MOCVD) have been investigated. A large number of mercury clusters were revealed by transmission electron microscopy in high mercury partial pressure specimens. There were some dislocation loops that seemed to originate on tellurium interstitials in the layers grown under low mercury partial pressure. All the specimens exhibited n-type conduction from Hall effect measurements. The Hall coefficient of HgTe under a mercury partial pressure below 2 x 10(-2) atm has been found to be controlled by the mercury partial pressure. On the other hand, the Hall coefficient of HgTe above 2 x 10(-2) atm mercury partial pressure could not be controlled by varying the mercury partial pressure. Therefore, the impurity doping is supposed to be suitable for controlling the hole concentration in this high mercury pressure region.

引用

页码：49 / 53

页数：5

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