OVERLAPPING ELECTRON TRAPS IN N-TYPE SILICON STUDIED BY CAPACITANCE TRANSIENT SPECTROSCOPY

被引：156

作者：

SVENSSON, BG

RYDEN, KH

LEWERENTZ, BMS

机构：

[1] SWEDISH INST MICROELECTR,S-16424 KISTA STOCKHOLM,SWEDEN

[2] SWEDISH DEF RES ESTAB,S-58111 LINKOPING,SWEDEN

来源：

关键词：

D O I：

10.1063/1.344389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1699 / 1704

页数：6

共 30 条

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