EQUILIBRIUM CALCULATIONS FOR VPE-INGAASP

[1] [Anonymous], 1978, HETEROSTRUCTURE LASE

[2] GA-GAP-GAAS TERNARY PHASE DIAGRAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) : 700 - &

[3] LIQUID-PHASE EPITAXY OF INXGA1-XAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1393 - &

[4] BAN VS, 1973, 4TH P INT C CHEM VAP, P31

[5] BAN VS, 1973, J PHYS CHEM SOLIDS, V34, P1119

[6] PREPARATION OF EPITAXIAL GAXIN1-XAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 164 - &

[7] FIBER-OPTICAL TRANSMISSION BETWEEN 0.8 AND 1.4 MU-M [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) : 180 - 193

[8] PREPARATION AND PROPERTIES OF VAPOR-PHASE-EPITAXIAL-GROWN GAINASP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) : 2167 - 2168

[9] ENSTROM RE, 1973, GALLIUM ARSENIDE REL, P37

[10] RECOMBINATION PROPERTIES OF LATTICE-MISMATCHED INXGA1-XP/GAAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4275 - 4280

[1] [Anonymous], 1978, HETEROSTRUCTURE LASE

[2] GA-GAP-GAAS TERNARY PHASE DIAGRAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) : 700 - &

[3] LIQUID-PHASE EPITAXY OF INXGA1-XAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1393 - &

[4] BAN VS, 1973, 4TH P INT C CHEM VAP, P31

[5] BAN VS, 1973, J PHYS CHEM SOLIDS, V34, P1119

[6] PREPARATION OF EPITAXIAL GAXIN1-XAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 164 - &

[7] FIBER-OPTICAL TRANSMISSION BETWEEN 0.8 AND 1.4 MU-M [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) : 180 - 193

[8] PREPARATION AND PROPERTIES OF VAPOR-PHASE-EPITAXIAL-GROWN GAINASP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) : 2167 - 2168

[9] ENSTROM RE, 1973, GALLIUM ARSENIDE REL, P37

[10] RECOMBINATION PROPERTIES OF LATTICE-MISMATCHED INXGA1-XP/GAAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4275 - 4280