THRESHOLD ENERGY DENSITY FOR PULSED-LASER ANNEALING OF ION-IMPLANTED SILICON

被引：2

作者：

HOONHOUT, D

SARIS, FW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 06期

关键词：

D O I：

10.1063/1.331219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4379 / 4388

页数：10

共 48 条

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