MOSFET THRESHOLD EXTRACTION FROM VOLTAGE-ONLY MEASUREMENTS

被引：7

作者：

GALUPMONTORO, C

SCHNEIDER, MC

KOERICH, AL

PINTO, RLO

机构：

[1] LINSE-EEL, Universidade Federal de Santa Catarina, 88040 900, Florianopolis SC

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 17期

关键词：

MOSFET; SEMICONDUCTOR DEVICE CHARACTERIZATION;

D O I：

10.1049/el:19940979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors describe a method for determining the MOS transistor parameters from voltage measurements by considering two transistors in series. The voltage characteristics at the intermediate node of the two connected transistors allow easy and direct determination of the threshold voltage, the pinch-off voltage and the slope factor.

引用

页码：1458 / 1459

页数：2

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[3]

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[7]

VITTOZ E, MOS TRANSISTOR INTEN

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