ANNEALING BEHAVIOR OF A VOID NETWORK IN AMORPHOUS SILICON

[1] BARNA A, 1973, 5TH P INT C AM LIQ S, P109

[2] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &

[3] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[4] HIGH-RESOLUTION ELECTRON MICROSCOPE OBSERVATION OF VOIDS IN AMORPHOUS GE [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (26) : 1794 - &

[5] OPTICAL EVIDENCE FOR A NETWORK OF CRACKLIKE VOIDS IN AMORPHOUS GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (25) : 1716 - &

[6] EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (20) : 1167 - &

[7] EFFECTS OF OXYGEN ON PROPERTIES OF AMORPHOUS-GE FILMS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (02): : 489 - 496

[8] VOIDS IN AMORPHOUS-SEMICONDUCTORS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 16 (01) : 55 - 71

[9] TITLE R. S., 1970, 10 INT C PHYS SEM

[1] BARNA A, 1973, 5TH P INT C AM LIQ S, P109

[2] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &

[3] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[4] HIGH-RESOLUTION ELECTRON MICROSCOPE OBSERVATION OF VOIDS IN AMORPHOUS GE [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (26) : 1794 - &

[5] OPTICAL EVIDENCE FOR A NETWORK OF CRACKLIKE VOIDS IN AMORPHOUS GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (25) : 1716 - &

[6] EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (20) : 1167 - &

[7] EFFECTS OF OXYGEN ON PROPERTIES OF AMORPHOUS-GE FILMS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (02): : 489 - 496

[8] VOIDS IN AMORPHOUS-SEMICONDUCTORS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 16 (01) : 55 - 71

[9] TITLE R. S., 1970, 10 INT C PHYS SEM