MECHANICAL STRENGTH OF SILICON-CRYSTALS WITH OXYGEN AND BORON IMPURITIES

被引：14

作者：

FUKUDA, T

OHSAWA, A

机构：

[1] Fujitsu Laboratories Ltd., Atsugi 243-01

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 23期

关键词：

D O I：

10.1063/1.104791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanical strength of epitaxial and Czochralski (CZ) silicon single crystals having boron concentrations of 10(15)-l0(20) cm-3 is investigated by varying the concentration of oxygen atoms. Crystal strength is measured by the indentation technique in a temperature range from 800 to 1100-degrees-C. The strength of both epitaxial and CZ silicon crystals is insensitive to boron concentrations up to 10(18) cm-3. As boron concentration increases above 10(18) cm-3, the strength of both the crystals improves dramatically. The strengthening is caused by dislocation locking of boron atoms in epitaxial crystals and of both oxygen and boron atoms in CZ crystals.

引用

页码：2634 / 2635

页数：2

共 15 条

[1]

ABE T, 1981, SEMICONDUCTOR SILICO, P54

[2] EFFECTS OF BORON CONCENTRATION UPON OXYGEN PRECIPITATION IN CZ SILICON [J].