INDENTATION ROSETTES AND DISLOCATION LOCKING BY OXYGEN IN SILICON

被引：20

作者：

HARADA, H ^{[1
]}

SUMINO, K ^{[1
]}

机构：

[1] TOHOKU UNIV,IRON STEEL & OTHER MET RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

关键词：

D O I：

10.1063/1.331314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4838 / 4842

页数：5

共 16 条

[1] DIFFERENCES IN PLASTIC-DEFORMATION BEHAVIOR OF CZ-GROWTH AND FZ-GROWN SILICON-CRYSTALS
DOERSCHEL, J
KIRSCHT, FG
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01): : K85 - K88
[2] EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON
EROFEEV, VN
NIKITENKO, VI
OSVENSKII, VB
[J]. PHYSICA STATUS SOLIDI, 1969, 35 (01): : 79 - +
[3] EROFEEV VN, 1971, SOV PHYS-SOLID STATE, V13, P116
[4] GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209
[5] TEMPERATURE-DEPENDENCE OF CRITICAL STRESS IN OXYGEN-FREE SILICON
HU, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5678 - 5679
[6] METHOD FOR FINDING CRITICAL STRESSES OF DISLOCATION MOVEMENT
HU, SM
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 139 - 141
[7] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON
HU, SM
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 53 - 55
[8] EFFECT OF OXYGEN ON DISLOCATION MOVEMENT IN SILICON
HU, SM
PATRICK, WJ
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 1869 - 1874
[9] IMAI M, UNPUB
[10] KAISER W, 1957, J APPL PHYS, V28, P822