RBS AND RECOIL SPECTROMETRY ANALYSIS OF COSI2 FORMATION ON GAAS

被引：11

作者：

HULT, M

WHITLOW, HJ

OSTLING, M

LUNDBERG, N

ZARING, C

COHEN, DD

DYTLEWSKI, N

JOHNSTON, PN

WALKER, SR

机构：

[1] ROYAL INST TECHNOL,DEPT SOLID STATE ELECTR,S-16428 KISTA,SWEDEN

[2] AUSTRALIAN NUCL SCI & TECHNOL ORG,MENAI 2234,AUSTRALIA

[3] ROYAL MELBOURNE INST TECHNOL,DEPT APPL PHYS,MELBOURNE,VIC 3001,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 85卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)95950-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Mass and energy-dispersive recoil spectrometry has recently reached the state of development where it is possible to separately characterise Ga and As in GaAs samples. Since it is possible to simultaneously characterise several elements (light as well as heavy), e.g. C, O, Si, Co, Ga and As, the technique is suited for examining the depth distribution of metallisation contacts on GaAs. In a Swedish-Australian collaboration a recoil detector telescope was attached to a beamline of the FN tandem accelerator ''ANTARES'', at Lucas Heights Research Laboratories, Australia. In the measurements presented here, I-127(10)+ at an energy of 77 MeV was employed to analyse GaAs samples with thin film overlayers - Si(220 nm)/Co(50 nm)/[100]-GaAs. A reference sample and samples annealed at 300 to 600-degrees-C were analysed. The measurements showed that CoSi2 is formed during annealing at and above 500-degrees-C with no detectable reaction between the GaAs-substrate and the CoSi2 overlayer.

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页码：916 / 920

页数：5

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