HIGH-RESOLUTION RECOIL SPECTROMETRY FOR SEPARATE CHARACTERIZATION OF GA AND AS IN ALXGA(1-X)AS STRUCTURES

被引:20
作者
HULT, M [1 ]
WHITLOW, HJ [1 ]
OSTLING, M [1 ]
机构
[1] ROYAL INST TECHNOL,DEPT SOLID STATE ELECTR,S-16428 KISTA,SWEDEN
关键词
D O I
10.1063/1.106969
中图分类号
O59 [应用物理学];
学科分类号
摘要
Mass and energy-dispersive recoil spectrometry, where the recoil energy is derived from the recoil time of flight, has been used to characterize the depth distribution of Al, Ga, and As in an AlxGa(1-x)As quantum-well structure. Signals characterizing the Al, Ga, and As distribution with good separation between Ga and As (average crosstalk < 2%) could be obtained from depths less than 560 nm from the surface. The depth resolution of the As signal at the surface was 16 nm FWHM, which is considerably better than achieved using a silicon particle detector (34 nm).
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页码:219 / 221
页数:3
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