THERMALLY-INDUCED DEFECTS IN SILICON CONTAINING OXYGEN AND CARBON

[1] EFFECT OF CARBON ON THERMAL DONOR FORMATION IN HEAT-TREATED PULLED SILICON CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (02) : 255 - &

[2] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436

[3] ELECTRICAL-ACTIVITY OF OXYGEN IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02): : 699 - 707

[4] ON THE KINETICS OF THERMAL DONORS IN OXYGEN-RICH SILICON IN THE RANGE FROM 450-DEGREES-C TO 900-DEGREES-C [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (02): : K223 - K226

[5] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J]. SOLID-STATE ELECTRONICS, 1973, 16 (08) : 887 - 893

[6] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363

[7] HELMREICH D, 1977, SEMICONDUCTOR SILICO, P626

[8] UNIAXIAL STRESS SPLITTING OF DOUBLY DEGENERATE STATES OF TETRAGONAL AND TRIGONAL CENTRES IN CUBIC CRYSTALS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 90 (569P): : 827 - &

[9] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554

[10] COMPARISON OF 2 KINDS OF OXYGEN DONORS IN SILICON BY RESISTIVITY MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8095 - 8101

[1] EFFECT OF CARBON ON THERMAL DONOR FORMATION IN HEAT-TREATED PULLED SILICON CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (02) : 255 - &

[2] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436

[3] ELECTRICAL-ACTIVITY OF OXYGEN IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02): : 699 - 707

[4] ON THE KINETICS OF THERMAL DONORS IN OXYGEN-RICH SILICON IN THE RANGE FROM 450-DEGREES-C TO 900-DEGREES-C [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (02): : K223 - K226

[5] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J]. SOLID-STATE ELECTRONICS, 1973, 16 (08) : 887 - 893

[6] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363

[7] HELMREICH D, 1977, SEMICONDUCTOR SILICO, P626

[8] UNIAXIAL STRESS SPLITTING OF DOUBLY DEGENERATE STATES OF TETRAGONAL AND TRIGONAL CENTRES IN CUBIC CRYSTALS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 90 (569P): : 827 - &

[9] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554

[10] COMPARISON OF 2 KINDS OF OXYGEN DONORS IN SILICON BY RESISTIVITY MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8095 - 8101