ELECTRICAL-PROPERTIES OF CD-DOPED AND MG-DOPED INP

被引：9

作者：

BENZAQUEN, M ^{[1
]}

BELACHE, B ^{[1
]}

BLAAUW, C ^{[1
]}

机构：

[1] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.46.6732

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on Hall transport measurements of two p-type Cd-doped InP epilayers and two Mg-doped InP layers with low compensation levels. The acceptor concentrations and the compensation ratios were determined with an extended-state Hall transport model, which provided a good description of the mobilities and the free-hole concentrations. Binding energies of 51 and 38.7 meV were measured for the purest Cd- and Mg-doped samples, respectively. Nearest-neighbor hopping was present in all samples, consistent with a model by Shklovskii and Efros. Saturation of the corresponding conductivity was observed in the Mg-doped samples, in excellent agreement with a model by Shklovskii and Yanchev. Variable-range hopping was observed below 6 K, and was found to be consistent with Mott's expression for the conductivity. An unusual sip reversal of the Hall constant was observed in the Mg-doped samples at the onset of impurity conduction.

引用

页码：6732 / 6738

页数：7

共 21 条

[1] PHOTOLUMINESCENCE MEASUREMENTS ON OPEN-TUBE HEAT-TREATED AND CD-DIFFUSED INP [J].