CHARACTERIZATION OF MG-DOPED INP GROWN BY MOCVD USING A BIS(METHYLCYCLOPENTADIENYL)MAGNESIUM DOPANT SOURCE

被引：16

作者：

BLAAUW, C

BRUCE, RA

MINER, CJ

HOWARD, AJ

EMMERSTORFER, B

SPRINGTHORPE, AJ

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 05期

关键词：

D O I：

10.1007/BF02657467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：567 / 572

页数：6

共 17 条

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[9]

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[10] A STUDY OF P-TYPE DOPANTS FOR INP GROWN BY ADDUCT MOVPE [J].

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