ANOMALOUS ELECTRICAL BEHAVIOR OF N-TYPE INP

被引:9
作者
BENZAQUEN, M [1 ]
BEAUDOIN, M [1 ]
WALSH, D [1 ]
PUETZ, N [1 ]
机构
[1] BELL NO RES LTD,OTTAWA K1Y 4H5,ONTARIO,CANADA
来源
PHYSICAL REVIEW B | 1988年 / 38卷 / 11期
关键词
D O I
10.1103/PhysRevB.38.7824
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:7824 / 7827
页数:4
相关论文
共 15 条
[1]   The Hall effect in III-V semiconductor assessment [J].
Anderson, D. A. ;
Apsley, N. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (03) :187-202
[2]   HIGH-TEMPERATURE MOBILITY OF PURE N-TYPE INP EPITAXIAL LAYERS [J].
BENZAQUEN, M ;
WALSH, D ;
MAZURUK, K .
PHYSICAL REVIEW B, 1987, 36 (08) :4388-4393
[3]   ELECTRICAL CHARACTERISTICS OF III-V COMPOUNDS GROWN BY MOVPE [J].
BENZAQUEN, M ;
MAZURUK, K ;
WALSH, D ;
BLAAUW, C ;
PUETZ, N .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :430-436
[4]   HALL FACTOR OF DOPED NORMAL-TYPE GAAS AND NORMAL-TYPE INP [J].
BENZAQUEN, M ;
WALSH, D ;
MAZURUK, K .
PHYSICAL REVIEW B, 1986, 34 (12) :8947-8949
[5]  
BROOKS H, 1951, PHYS REV, V83, P879
[6]   GROWTH OF ULTRAPURE INP BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
CHEN, CH ;
KITAMURA, M ;
COHEN, RM ;
STRINGFELLOW, GB .
APPLIED PHYSICS LETTERS, 1986, 49 (15) :963-965
[7]   GROWTH OF ULTRAPURE AND SI-DOPED INP BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
DIFORTEPOISSON, MA ;
BRYLINSKI, C ;
DUCHEMIN, JP .
APPLIED PHYSICS LETTERS, 1985, 46 (05) :476-478
[8]   NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J].
ERGINSOY, C .
PHYSICAL REVIEW, 1950, 79 (06) :1013-1014
[9]   MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .2. THEORY [J].
FALICOV, LM ;
CUEVAS, M .
PHYSICAL REVIEW, 1967, 164 (03) :1025-&
[10]  
GRINBERG AA, 1978, SOV PHYS SEMICOND+, V12, P383