HALL FACTOR OF DOPED NORMAL-TYPE GAAS AND NORMAL-TYPE INP

[1] ELECTRICAL CHARACTERISTICS OF III-V COMPOUNDS GROWN BY MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 430 - 436

[2] AUTOEPITAXY AND PROPERTIES OF AS-GA OBTAINED BY METAL-ORGANIC VAPOR-PHASE EPITAXY [J]. CANADIAN JOURNAL OF PHYSICS, 1985, 63 (06) : 732 - 735

[3] VARIABLE-RANGE-HOPPING CONDUCTIVITY IN COMPENSATED N-TYPE GAAS [J]. PHYSICAL REVIEW B, 1984, 30 (12): : 7287 - 7289

[4] BENZAQUEN M, UNPUB J ELECTRON MAT

[5] BLOOD P, 1978, REP PROG PHYS, V41, P2

[6] BROOKS H, 1951, PHYS REV, V83, P879

[7] BUBE RH, 1974, ELECTRONIC PROPERTIE, P378

[8] ELECTRON-SCATTERING BY LOCALIZED IMPURITY POTENTIALS IN COMPENSATED GAAS [J]. PHYSICAL REVIEW B, 1981, 23 (06): : 2956 - 2959

[9] PIEZOELECTRIC SCATTERING AND PHONON DRAG IN ZNO AND CDS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2287 - &

[10] THEORY OF ELECTTON GALVANOMAGNETICS IN CRYSTALS - HALL EFFECT IN SEMICONDUCTORS AND SEMIMETALS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 55 (02): : 687 - 696

[1] ELECTRICAL CHARACTERISTICS OF III-V COMPOUNDS GROWN BY MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 430 - 436

[2] AUTOEPITAXY AND PROPERTIES OF AS-GA OBTAINED BY METAL-ORGANIC VAPOR-PHASE EPITAXY [J]. CANADIAN JOURNAL OF PHYSICS, 1985, 63 (06) : 732 - 735

[3] VARIABLE-RANGE-HOPPING CONDUCTIVITY IN COMPENSATED N-TYPE GAAS [J]. PHYSICAL REVIEW B, 1984, 30 (12): : 7287 - 7289

[4] BENZAQUEN M, UNPUB J ELECTRON MAT

[5] BLOOD P, 1978, REP PROG PHYS, V41, P2

[6] BROOKS H, 1951, PHYS REV, V83, P879

[7] BUBE RH, 1974, ELECTRONIC PROPERTIE, P378

[8] ELECTRON-SCATTERING BY LOCALIZED IMPURITY POTENTIALS IN COMPENSATED GAAS [J]. PHYSICAL REVIEW B, 1981, 23 (06): : 2956 - 2959

[9] PIEZOELECTRIC SCATTERING AND PHONON DRAG IN ZNO AND CDS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2287 - &

[10] THEORY OF ELECTTON GALVANOMAGNETICS IN CRYSTALS - HALL EFFECT IN SEMICONDUCTORS AND SEMIMETALS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 55 (02): : 687 - 696