DEEP-LEVEL ANALYSIS IN TE-DOPED GAAS0.62P0.38

被引：20

作者：

KANIEWSKA, M

KANIEWSKI, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.340012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1086 / 1092

页数：7

共 18 条

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[6]

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