TRANSPORT-PROPERTIES OF HEXAGONAL AND TETRAGONAL MOSI2 THIN-FILMS

被引:12
作者
DEVRIES, JWC
VANOMMEN, AH
机构
关键词
D O I
10.1063/1.341918
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:749 / 752
页数:4
相关论文
共 15 条
  • [1] BATTACHARYYA BK, 1985, PHYS REV B, V32, P7973
  • [2] BLATT FJ, 1968, PHYSICS ELECTRONIC C, pCH7
  • [3] PROPERTIES OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS
    CHOW, TP
    BOWER, DH
    VANART, RL
    KATZ, W
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 952 - 956
  • [4] DHEURLE FM, 1980, J APPL PHYS, V51, P5976, DOI 10.1063/1.327517
  • [5] EPPENGA R, COMMUNICATION
  • [6] HENSEL JC, 1987, MATERIALS RES SOC C, V77
  • [7] ELECTRONIC TRANSPORT-PROPERTIES OF THIN-FILMS OF WSI2 AND MOSI2
    KRONTIRAS, C
    SUNI, I
    DHEURLE, FM
    LEGOUES, FK
    JOSHI, R
    [J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1987, 17 (09): : 1953 - 1961
  • [8] Electronic transport and microstructure in MoSi2 thin films
    Martin, T. L.
    Mahan, J. E.
    [J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (03) : 493 - 502
  • [9] ELECTRONIC TRANSPORT-PROPERTIES OF TUNGSTEN SILICIDE THIN-FILMS
    MARTIN, TL
    MALHOTRA, V
    MAHAN, JE
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (02) : 309 - 325
  • [10] ELECTRICAL TRANSPORT-PROPERTIES OF TRANSITION-METAL DISILICIDE FILMS
    NAVA, F
    TU, KN
    MAZZEGA, E
    MICHELINI, M
    QUEIROLO, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1085 - 1093