IN-SITU SOLID-PHASE EPITAXIAL-GROWTH OF C49-TISI2 ON SI(111)-7X7 SUBSTRATE

C49-TiSi2 film was grown epitaxially on Si (111) substrate by depositing Ti film on Si (111)-7x7 surface followed by in situ annealing in ultrahigh vacuum. The deposition was monitored by means of reflection high energy electron diffraction as a function of the thickness of Ti film. The best result for the growth of epitaxial C49-TiSi2 was obtained from the Ti(30 ML)/Si (111)-7x7 Si (111)-7X7 sample which was annealed at 650-degrees-C for 20 min. Images of cross-sectional high resolution transmission electron microscopy shows that the silicide/silicon interface is shown to be clear and flat. The orientation relationships are TiSi2[211BAR]\\Si[011BAR], TiSi2 (120)\\Si (111) without misorientation angle. Almost the whole area of the TiSi2 layer is revealed as an epitaxial C49 structure.