LOCALIZED EPITAXIAL-GROWTH OF C54 AND C49 TISI2 ON (111)SI

[1] ARSENIC OUT-DIFFUSION DURING TISI2 FORMATION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 744 - 746

[2] METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5240 - 5245

[3] CO2SI, CRSI2, ZRSI2 AND TISI2 FORMATION STUDIED BY A RADIOACTIVE SI-31 MARKER TECHNIQUE [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 127 - 133

[4] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[5] CHEN JY, 1984, SOLID STATE TECHNOL, V27, P145

[6] EFFECTS OF 2-STEP ANNEALING ON THE EPITAXIAL-GROWTH OF COSI2 ON SILICON [J]. THIN SOLID FILMS, 1983, 104 (1-2) : 183 - 189

[7] INTERFACIAL REACTIONS OF IRON THIN-FILMS ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5246 - 5250

[8] EPITAXIAL-GROWTH OF ZRSI2 ON SILICON WITH AN ION-BEAM MIXING ASSISTED SCHEME [J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 562 - 564

[9] EPITAXIAL-GROWTH OF VSI2 ON (111)SI [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1887 - 1889

[10] TITANIUM SILICIDE FORMATION ON BF2+-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 41 - 43

[1] ARSENIC OUT-DIFFUSION DURING TISI2 FORMATION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 744 - 746

[2] METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5240 - 5245

[3] CO2SI, CRSI2, ZRSI2 AND TISI2 FORMATION STUDIED BY A RADIOACTIVE SI-31 MARKER TECHNIQUE [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 127 - 133

[4] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[5] CHEN JY, 1984, SOLID STATE TECHNOL, V27, P145

[6] EFFECTS OF 2-STEP ANNEALING ON THE EPITAXIAL-GROWTH OF COSI2 ON SILICON [J]. THIN SOLID FILMS, 1983, 104 (1-2) : 183 - 189

[7] INTERFACIAL REACTIONS OF IRON THIN-FILMS ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5246 - 5250

[8] EPITAXIAL-GROWTH OF ZRSI2 ON SILICON WITH AN ION-BEAM MIXING ASSISTED SCHEME [J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 562 - 564

[9] EPITAXIAL-GROWTH OF VSI2 ON (111)SI [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1887 - 1889

[10] TITANIUM SILICIDE FORMATION ON BF2+-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 41 - 43