EFFECTS OF ANNEALING ON LIFETIME AND DEEP-LEVEL PHOTOLUMINESCENCE IN SEMIINSULATING GALLIUM-ARSENIDE

被引：16

作者：

HAEGEL, NM

WINNACKER, A

LEO, K

RUHLE, WW

GISDAKIS, S

机构：

[1] SIEMENS AG,RES & DEV LABS,D-8520 ERLANGEN,FED REP GER

[2] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 1,FED REP GER

[3] SIEMENS AG,RES & DEV LABS,D-8000 MUNICH 80,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.339378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2946 / 2950

页数：5

共 15 条

[1]

KAUFMANN U, 1984, P INT C SEMIINSULATI, P246

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ISHIDA, K .

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[3]

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[4]

KIKUTA T, 1985, I PHYSICS C SERIES, V74, P47

[5] INFLUENCE OF CARRIER LIFETIME ON THE COOLING OF A HOT ELECTRON-HOLE PLASMA IN GAAS [J].

LEO, K ;

RUHLE, WW .

SOLID STATE COMMUNICATIONS, 1987, 62 (09) :659-662

[6] SPATIAL-DISTRIBUTION OF FREE-CARRIER LIFETIME AND DEEP-LEVEL LUMINESCENCE ACROSS A SEMIINSULATING GAAS WAFER [J].

LEO, K ;

RUHLE, WW ;

HAEGEL, NM .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) :3055-3058

[7] OUT-DIFFUSION OF THE MAIN ELECTRON TRAP IN BULK GAAS DUE TO THERMAL-TREATMENT [J].

MAKRAMEBEID, S ;

GAUTARD, D ;

DEVILLARD, P ;

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :161-163

[8] IMPROVEMENT OF CRYSTAL HOMOGENEITIES IN LIQUID-ENCAPSULATED CZOCHRALSKI GROWN, SEMI-INSULATING GAAS BY HEAT-TREATMENT [J].

MIYAZAWA, S ;

HONDA, T ;

ISHII, Y ;

ISHIDA, S .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :410-412

[9]

RUMSBY D, 1984, P C SEM 3 5 MAT KAH, P165

[10]

SZE M, 1981, PHYS SEMICONDUCTOR D

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