IMPURITY INDUCED DISORDERING IN INGAAS/INGAALAS QUANTUM-WELLS USING IMPLANTED FLUORINE AND BORON

被引：14

作者：

BRYCE, AC

MARSH, JH

GWILLIAM, R

GLEW, RW

机构：

[1] STC TECHNOL LTD,HARLOW CM17 9NA,ESSEX,ENGLAND

[2] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1991年 / 138卷 / 02期

关键词：

SEMICONDUCTOR LASERS; QUANTUM WELLS;

D O I：

10.1049/ip-j.1991.0015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Impurity induced disordering of an InGaAs/InGaAlAs quantum well structure has been investigated using boron and fluorine. The impurities were introduced by ion implantation and followed by thermal annealing. Small blue shifts in the excition peak were observed in the boron implanted material. Much larger blue shifts, over 40 meV, were observed in the fluorine implanted material. At annealing temperatures greater than 650-degrees-C, red shifts in the exciton peak of unimplanted material were measured.

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收藏

页码：87 / 90

页数：4

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