NANOSECOND 4-WAVE-MIXING IN SEMIINSULATING GAAS

被引:13
作者
DISDIER, L
ROOSEN, G
机构
[1] Institut d'Optique Théorique et Appliquée, Unité de Recherche Associée au, Centre National de la Recherche Scientifique, 91403 Orsay Cedex, No. 14, Bâtiment 503
关键词
D O I
10.1016/0030-4018(92)90084-5
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Dynamic gratings of free carriers are generated from optical excitation, with nanosecond pulses, of the deep EL2 level in semi-insulating gallium arsenide. The photogenerated holes and electrons change the plasma frequency of the sample producing a nonlinear modification of its index of refraction. This effect is evidenced by a degenerate four-wave mixing experiment. In regards to the sample parameters, a fair agreement is obtained between the experimental values and the theoretical predictions derived from of the Drude-Lorentz model and the anharmonic motion of carriers.
引用
收藏
页码:559 / 568
页数:10
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