ABSORPTION, REFRACTIVE-INDEX, AND BIREFRINGENCE OF ALAS-GAAS MONOLAYERS

[1] REFRACTIVE-INDEX OF GA1-XALXAS [J]. SOLID STATE COMMUNICATIONS, 1974, 15 (01) : 59 - 63

[2] Akopyan R. M., 1976, Soviet Physics - Solid State, V17, P970

[3] ARTHUR JR, UNPUBLISHED

[4] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J]. PHYSICAL REVIEW B, 1976, 14 (12) : 5331 - 5343

[5] ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (12) : 766 - 769

[6] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4910 - &

[7] CASEY HC, COMMUNICATION

[8] SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 39 - 41

[9] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[10] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[1] REFRACTIVE-INDEX OF GA1-XALXAS [J]. SOLID STATE COMMUNICATIONS, 1974, 15 (01) : 59 - 63

[2] Akopyan R. M., 1976, Soviet Physics - Solid State, V17, P970

[3] ARTHUR JR, UNPUBLISHED

[4] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J]. PHYSICAL REVIEW B, 1976, 14 (12) : 5331 - 5343

[5] ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (12) : 766 - 769

[6] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4910 - &

[7] CASEY HC, COMMUNICATION

[8] SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 39 - 41

[9] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[10] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9